SNII Área I ELECTRÓNICA 58 GUTIERREZ DOMINGUEZ, EDMUNDO ANTONIO
GUTIERREZ DOMINGUEZ, EDMUNDO ANTONIO

GUTIERREZ DOMINGUEZ, EDMUNDO ANTONIO

FÍSICA · Nivel 3

researcher physics semiconductor devices

Desde 1993 es Professor en Instituto Nacional de Astrofísica Óptica y Electrónica

Edmundo A. Gutiérrez-D. got his PhD title, with summa cum laude, from the Catholic University of Leuven, Belgium in 1993, where he also spent 6 years as a research assistant at the Interuniversity MicroElectronics Center (IMEC). He has been invited...

Edmundo A. Gutiérrez-D. got his PhD title, with summa cum laude, from the Catholic University of Leuven, Belgium in 1993, where he also spent 6 years as a research assistant at the Interuniversity MicroElectronics Center (IMEC). He has been invited Professor at Simon Fraser University (Vancouver, Canada), University of Sao Paulo (Brazil), and the Technical University of Vienna, (Austria). From 2000 to 2002 was appointed as Design Manager of the Motorola Mexico Center for Semiconductor Technology, and from 2005 to 2007 Research Manager of the Intel Mexico Research Center. Currently Prof. Gutiérrez-D. is with the Department of Electronics of the National Institute of Astrophysics, Optics and Electronics (INAOE) in Puebla, Mexico. Professor Gutiérrez-D. is an IEEE-EDS (Electron Devices Society) member since 1995 and Fellow member since 2022, and serves as a Distinguished Lecturer, IEEE Transactions On Electron Devices (TED) Associate Editor, IEEE Transactions On Devices and Materials Reliability (TDMR) Editor-In-Chief. From 2020 to April 2024 was appointed as General Director of the Mexico National Institute for Astrophysics, Optics and Electronics (INAOE), Puebla, Mexico. He serves also as member of the Board of Governors of IEEE-EDS, and member of the advisory forum for science and technology of the Mexico National Council for Science and Technology. Prof. Gutiérrez-D. has published 64 papers in international journals, and 82 referred international conferences in the field of physics, characterization, and modelling of semiconductor devices. He has authored two books: 1.- Edmundo A. Gutierrez-D., M. Jamal Deen and Cor Claeys, "Low Temperature Electronics: Physics, Devices, Circuits and Applications", Academic Press, New York, 964 pages (2001). ISBN:0123106753, and 2.- Edmundo A. Gutiérrez-D., “Nano-scaled semiconductor devices; Physics, Modelling, Characterisation, and Societal Impact”, published by The Institution of Engineering and Technology (IET), May 2016. 5 chapters, 450 pages. ISBN: 978-1-84919-930-8, and co-authored a book chapter; Chapter 4: “Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOSFET Devices”, Marquez C., Huerta O., Tec-Chim A.I., Guarin F., Gutierrez-D E.A., Gamiz F. (2020), pp. 135-174. Published in Grasser T. (eds) “Noise in Nanoscale Semiconductor Devices”. Springer, Cham, ISBN: 978-3-030-37500-3, 2020. The IEEE (Institute of Electrical and Electronics Engineers) [https://www.ieee.org/].

In February 6, 2025, was introduced as the National Coordinator of the Mexico Semiconductors Plan, in particular under the coordination of the Kutsari Semiconductors Center, with the initiative to create the Kutsari Design Center (KDC), a center for the design of integrated circuits. And also to evaluate the creation of a Kutsari Fabrication Center (KFC), a semiconductors device fabrication facility.

More details at https://scholar.google.com/citations?user=eRQRMb8AAAAJ&hl=en

Leer más

Perfil académico

Nombre EDMUNDO ANTONIO GUTIERREZ DOMINGUEZ
Área FÍSICO-MATEMÁTICAS Y CIENCIAS DE LA TIERRA
Campo FÍSICA
Disciplina ELECTRÓNICA
Especialidad DISPOSITIVOS SEMICONDUCTORES
CVU 14373
Institución
Dependencia DIRECCION DE DESARROLLO TECNOLOGICO
Entidad COAHUILA DE ZARAGOZA
Nivel 3
Vigencia Inicio: 01/01/2025
Fin: 31/12/2029