MOLINA REYES, JOEL

Dr. Joel Molina-Reyes received the B.S.E.E. degree (magna cum laude) from the Universidad Veracruzana, Mexico, a M.Sc. degree in Microelectronics from the National Institute for Astrophysics, Optics and Electronics (INAOE), Mexico, and the Ph.D. in Advanced Applied Electronics from the Tokyo Institute of Technology, Tokyo, Japan. Dr. Molina has been a Young Researcher at STARC (Semiconductor Technology Academic Research Center) in Tsukuba, Japan, working in the development of nanoscaled electron materials for advanced transistor technologies for Toshiba and Fujitsu. He has been Invited Professor at Tokyo Institute of Technology for the development of advanced ferroelectric memory devices and at Vellore Institute of Technology for the processing of advanced electron materials and devices, in Japan and India respectively. He is Senior Member of IEEE, Member of the Electron Devices Society, Chair of the EDS Puebla Chapter and Regional Editor for the EDS Newsletter. Dr. Molina is currently a Professor with the Microelectronics group of INAOE and his research interests include the physics and technology of CMOS-compatible electron devices based on ultra-thin metal and high dielectric constant insulators for application in advanced logic, memory, sensing, MEMS, novel nanostructured materials and photoactive technologies. He has authored or co-authored over 80 peer-reviewed JCR research publications and is a member of the National System of Researchers (SNI level 2). Lately, he is working in the development of advanced processes for enhanced electron materials and devices applied to quantum computing by developing enhanced Josephson junctions and coplanar waveguides, which are at the heart of the superconducting qubits.