Información*
| Nombre | ANTONIO CERDEIRA ALTUZARRA |
|---|---|
| Área | INGENIERÍAS Y DESARROLLO TECNOLÓGICO |
| Campo | INGENIERÍA |
| Disciplina | INGENIERÍA ELECTRÓNICA |
| Especialidad | ELECTRÓNICA DEL ESTADO SÓLIDO |
| CVU | 15936 |
| Institución |
SIN INSTITUCIÓN
|
|---|---|
| Dependencia | NO APLICA |
| Entidad | NO APLICA |
| Nivel | 2 |
| Vigencia | Inicio: 01/01/2015 |
| Fin: 31/12/2032 | |
| Categoría: | EXTENSION 15 AÑOS |
* Información del primer trimestre de 2026.
Fuente: SECIHTI.
Publicaciones ORCID
- 2024
- Determing the characteristics of the localized density of states distribution present in MoS2 2d FETs Facta universitatis - series: Electronics and Energetics
- 2023
- Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures Solid-State Electronics
- High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs IEEE Journal of the Electron Devices Society
- 2022
- On the compact modelling of Si nanowire and Si nanosheet MOSFETs Semiconductor Science and Technology
- 2021
- Analytical I–V and C–V models for symmetric double-gate AOSTFTs Semiconductor Science and Technology
- Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances IEEE Transactions on Electron Devices
- Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM) IEEE Journal of the Electron Devices Society
- 2020
- Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K IEEE Transactions on Electron Devices
- Analytical Current–Voltage Model for Double-Gate a-IGZO TFTs With Symmetric Structure for Above Threshold IEEE Transactions on Electron Devices
- 2019
- Features of the Nonlinear Harmonic Distortion in AOSTFTs IEEE Transactions on Electron Devices
