MORALES SANCHEZ, ALFREDO

MORALES SANCHEZ, ALFREDO

FÍSICA · Nivel 2

Nanoparticles Memristors Si Photonics Light Emission Photodetectors

Desde 2019 es Investigador Titular B en Instituto Nacional de Astrofísica Óptica y Electrónica

Researcher at National Institute of Astrophysics, Optics and Electronics (INAOE)

Researcher at National Institute of Astrophysics, Optics and Electronics (INAOE)

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Perfil académico

Nombre ALFREDO MORALES SANCHEZ
Área FÍSICO-MATEMÁTICAS Y CIENCIAS DE LA TIERRA
Campo FÍSICA
Disciplina FÍSICA DEL ESTADO SÓLIDO
Especialidad MICROELECTRONICA
CVU 102732
Institución
Dependencia DIRECCION DE INVESTIGACION Y DESARROLLO TECNOLOGICO
Entidad PUEBLA
Nivel 2
Vigencia Inicio: 01/01/2022
Fin: 31/12/2026

Publicaciones ORCID

2026
Optimization of Thicknesses, Defect Density, and Bandgap in a Lead-Free CsSnBr3/Silicon Two-Terminal Tandem Solar Cell via Simulation and Numerical Interpolation Processes
Highly photoluminescent polymer films deposited on glass and flexible substrates based on partially oxidized silicon nanocrystals Optical Materials
2025
Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO2/Si/SiO2 Stack Layers for Resistive Switching Memories Materials
Three-Dimensional Simulation of Bipolar Resistive Switching Memory with Embedded Conductive Nanocrystals in an Oxide Matrix Chips
Negative differential resistance and resistive switching behavior in broad-spectrum electroluminescent devices based on Si3N4/Si thin films deposited by E-beam Applied Surface Science
Synergistic effects of vegetal melanin and porous silicon powder to improve the efficiency of solar panel Solar Energy
Enhancement of the photoluminescent intensity of amorphous silicon carbide (a-Si1-xCx:H) by the formation of small nanocrystals during the film preparation at low temperature Journal of Alloys and Compounds
2024
Analysis of Wear Mechanisms Under Cutting Parameters: Influence of Double Layer TiAlN/TiN PVD and TiCN/Al2O3 Chemical Vapor Deposition-Coated Tools on Milling of AISI D2 Steel Coatings
Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor Journal of Composites Science
Luminescence Study of Hydrogenated Silicon Oxycarbide (SiOxCy:H) Thin Films Deposited by Hot Wire Chemical Vapor Deposition as Active Layers in Light Emitting Devices Inorganics