MORALES SANCHEZ, ALFREDO
FÍSICA · Nivel 2
Nanoparticles
Memristors
Si Photonics
Light Emission
Photodetectors
Desde 2019 es Investigador Titular B en Instituto Nacional de Astrofísica Óptica y Electrónica
Researcher at National Institute of Astrophysics, Optics and Electronics (INAOE)
Researcher at National Institute of Astrophysics, Optics and Electronics (INAOE)
| Nombre | ALFREDO MORALES SANCHEZ |
|---|---|
| Área | FÍSICO-MATEMÁTICAS Y CIENCIAS DE LA TIERRA |
| Campo | FÍSICA |
| Disciplina | FÍSICA DEL ESTADO SÓLIDO |
| Especialidad | MICROELECTRONICA |
| CVU | 102732 |
| Institución | |
|---|---|
| Dependencia | DIRECCION DE INVESTIGACION Y DESARROLLO TECNOLOGICO |
| Entidad | PUEBLA |
| Nivel | 2 |
| Vigencia | Inicio: 01/01/2022 |
| Fin: 31/12/2026 |
Publicaciones ORCID
- 2026
- Optimization of Thicknesses, Defect Density, and Bandgap in a Lead-Free CsSnBr3/Silicon Two-Terminal Tandem Solar Cell via Simulation and Numerical Interpolation Processes
- Highly photoluminescent polymer films deposited on glass and flexible substrates based on partially oxidized silicon nanocrystals Optical Materials
- 2025
- Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO2/Si/SiO2 Stack Layers for Resistive Switching Memories Materials
- Three-Dimensional Simulation of Bipolar Resistive Switching Memory with Embedded Conductive Nanocrystals in an Oxide Matrix Chips
- Negative differential resistance and resistive switching behavior in broad-spectrum electroluminescent devices based on Si3N4/Si thin films deposited by E-beam Applied Surface Science
- Synergistic effects of vegetal melanin and porous silicon powder to improve the efficiency of solar panel Solar Energy
- Enhancement of the photoluminescent intensity of amorphous silicon carbide (a-Si1-xCx:H) by the formation of small nanocrystals during the film preparation at low temperature Journal of Alloys and Compounds
- 2024
- Analysis of Wear Mechanisms Under Cutting Parameters: Influence of Double Layer TiAlN/TiN PVD and TiCN/Al2O3 Chemical Vapor Deposition-Coated Tools on Milling of AISI D2 Steel Coatings
- Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor Journal of Composites Science
- Luminescence Study of Hydrogenated Silicon Oxycarbide (SiOxCy:H) Thin Films Deposited by Hot Wire Chemical Vapor Deposition as Active Layers in Light Emitting Devices Inorganics

